Self-aligned, insulating-layer structure for integrated fabrication of organic self-assembled multilayer electronic devices

Troy Graves-Abe, Zhenan Bao, J. C. Sturm

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We demonstrate an approach for fabricating nanometer-scale devices with minimal device areas while still retaining compatibility with integrated metal wiring. A self-aligned layer of silicon oxide evaporated on top of a thin (25 nm) gold film deposited on a substrate with an etched step ensures that only a fraction of the gold, along the step edge, is exposed. Self-assembled multilayers of 11-mercaptoundecanoic acid (MUA) were grown on the exposed gold to define an arbitrarily long device length. A second, evaporated gold layer served as second electrode. Devices with between 3 and 7 MUA layers were insulating, with currents that decreased exponentially with the number of MUA layers.

Original languageEnglish (US)
Pages (from-to)2489-2492
Number of pages4
JournalNano Letters
Volume4
Issue number12
DOIs
StatePublished - Dec 1 2004

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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