Abstract
We demonstrate an approach for fabricating nanometer-scale devices with minimal device areas while still retaining compatibility with integrated metal wiring. A self-aligned layer of silicon oxide evaporated on top of a thin (25 nm) gold film deposited on a substrate with an etched step ensures that only a fraction of the gold, along the step edge, is exposed. Self-assembled multilayers of 11-mercaptoundecanoic acid (MUA) were grown on the exposed gold to define an arbitrarily long device length. A second, evaporated gold layer served as second electrode. Devices with between 3 and 7 MUA layers were insulating, with currents that decreased exponentially with the number of MUA layers.
Original language | English (US) |
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Pages (from-to) | 2489-2492 |
Number of pages | 4 |
Journal | Nano Letters |
Volume | 4 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2004 |
All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering