Self-aligned amorphous silicon thin film transistors with mobility above 1 cm²V^-1s^-1 fabricated at 300° C on clear plastic substrates

Engineering & Materials Science

• Amorphous silicon 100%
• Fabrication 27%
• Geometry 7%
• Glass transition 13%
• Metal foil 13%
• Plastics 53%
• Substrates 51%
• Superconducting transition temperature 13%
• Temperature 4%
• Thermal expansion 12%
• Thin film transistors 93%

Physics & Astronomy

• alignment 9%
• amorphous silicon 67%
• coefficients 6%
• fabrication 22%
• foils 10%
• geometry 6%
• glass transition temperature 11%
• micrometers 11%
• misalignment 11%
• plastics 56%
• requirements 8%
• self alignment 17%
• temperature 3%
• thermal expansion 10%
• thin films 37%
• transistors 58%

Chemical Compounds

• Amorphous Silicon 99%
• Compound Mobility 55%
• Field Effect 24%
• Foil 24%
• Glass Transition Temperature 20%
• Resistance 15%
• Thermal Expansion 25%