Self-aligned amorphous silicon thin-film transistors fabricated on clear plastic at 300°C

K. H. Cherenack, B. Hekmatshoar, James Christopher Sturm, Sigurd Wagner

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

We fabricated back-channel-cut and back-channelpassivated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on clear-plastic (CP) foil substrates using a silicon nitride (SiN x ) deposition temperature of 300°C. The TFTs were fabricated on CP and are as stable under high gate bias as TFTs made on glass substrates. A self-alignment technique was developed to align the channel passivation, the a-Si:H island, and the source/drain (S/D) terminals to the gate. Self-alignment allowed us to fabricate discrete TFTs across 7×7cm 2 of a free-standing sheet of CP foil to reduce the TFT channel length L to 3 μm and reduce the S/D overlap with the gate L SD to ∼1μm. To test the self-alignment techniques, we fabricated ring oscillators on the CP substrates. These results show that it is possible to fabricate state-of-the-art self-aligned a-Si:H TFTs and TFT circuits on plastic substrates.

Original languageEnglish (US)
Article number5530368
Pages (from-to)2381-2389
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume57
Issue number10
DOIs
StatePublished - Oct 1 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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