TY - JOUR
T1 - Self-aligned amorphous-silicon TFTs on clear plastic substrates
AU - Cheng, I. Chun
AU - Kattamis, Alex Z.
AU - Long, Ke
AU - Sturm, James C.
AU - Wagner, Sigurd
N1 - Funding Information:
Manuscript received December 16, 2005. This work was supported by the DuPont Company and the New Jersey Commission for Science and Technology. The review of this letter was arranged by Editor J. Sin. The authors are with the Department of Electrical Engineering and Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, NJ 08544 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/LED.2006.870247 Fig. 1. Optical transmission in the violet and near-UV region of (a) bare 75-m-thick clear plastic foil, and of clear plastic coated only with (b) 10-nm, (c) 30-nm, (d) 50-nm, and (e) 100-nm-thick i a-Si:H layers. The transmission values at = 405-nm are (a) 30%, (b) 7.7%, (c) 3.9%, (d) 1.6%, and (e) 0.2%, respectively.
PY - 2006/3
Y1 - 2006/3
N2 - We fabricated the first bottom-gate amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a clear plastic substrate with source and drain self-aligned to the gate. The top source and drain are self-aligned to the bottom gate by backside exposure photolithography through the plastic substrate and the TFT tri-layer. The a-Si:H channel in the tri-layer is made only 30 nm thick to ensure high optical transparency at the exposure wavelength of 405 nm. The TFTs have a threshold voltage of ∼3 V, subthreshold slope of ∼0.5 V/dec, linear mobility of ∼1cm2V-1 S-1, saturation mobility of ∼0.8 cm2V-1 S-1 and on/off current ratio of >106. These results show that self-alignment by backside exposure provides a solution to the fundamental challenge of making electronics on plastics: overlay misalignment.
AB - We fabricated the first bottom-gate amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a clear plastic substrate with source and drain self-aligned to the gate. The top source and drain are self-aligned to the bottom gate by backside exposure photolithography through the plastic substrate and the TFT tri-layer. The a-Si:H channel in the tri-layer is made only 30 nm thick to ensure high optical transparency at the exposure wavelength of 405 nm. The TFTs have a threshold voltage of ∼3 V, subthreshold slope of ∼0.5 V/dec, linear mobility of ∼1cm2V-1 S-1, saturation mobility of ∼0.8 cm2V-1 S-1 and on/off current ratio of >106. These results show that self-alignment by backside exposure provides a solution to the fundamental challenge of making electronics on plastics: overlay misalignment.
KW - Amorphous-silicon (a-Si:H)
KW - Plastic substrates
KW - Self-aligned process
KW - Thin-film transistors (TFTs)
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U2 - 10.1109/LED.2006.870247
DO - 10.1109/LED.2006.870247
M3 - Article
AN - SCOPUS:33644662800
SN - 0741-3106
VL - 27
SP - 166
EP - 168
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 3
ER -