Segregation of boron to polycrystalline and single-crystal Si 1-x-y Ge x C y and Si 1-y C y layers

E. J. Stewart, J. C. Sturm

Research output: Contribution to journalArticle

Abstract

Strong boron segregation to polycrystalline Si 1-x-y Ge x C y alloys from Si has previously been reported [MRS Symp. Proc. 669 (2001) J6.9]. In this study, we investigate potential mechanisms for this effect. We find that comparable segregation also occurs in both polycrystalline Si 1-y C y and single-crystal Si 1-x-y Ge x C y , indicating neither Ge nor grain boundary effects are needed for it to occur. In addition, the stability of the electrical properties of polycrystalline Si 1-x-y Ge x C y with annealing suggests that inactive B-C defects are not forming. Point defect gradients are presented as a mechanism consistent with the electrical data.

Original languageEnglish (US)
Pages (from-to)87-90
Number of pages4
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
StatePublished - Mar 15 2004

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Keywords

  • Boron
  • Diffusion
  • Polycrystalline
  • Segregation
  • Si Ge C

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