Segregation of boron to polycrystalline and single-crystal Si                          1-x-y                         Ge                         x                         C                         y                          and Si                         1-y                         C                         y                          layers

E. J. Stewart; J. C. Sturm

doi:10.1016/j.apsusc.2003.08.044

Segregation of boron to polycrystalline and single-crystal Si _1-x-y Ge _x C _y and Si _1-y C _y layers

Research output: Contribution to journal › Article › peer-review

Abstract

Strong boron segregation to polycrystalline Si _1-x-y Ge _x C _y alloys from Si has previously been reported [MRS Symp. Proc. 669 (2001) J6.9]. In this study, we investigate potential mechanisms for this effect. We find that comparable segregation also occurs in both polycrystalline Si _1-y C _y and single-crystal Si _1-x-y Ge _x C _y , indicating neither Ge nor grain boundary effects are needed for it to occur. In addition, the stability of the electrical properties of polycrystalline Si _1-x-y Ge _x C _y with annealing suggests that inactive B-C defects are not forming. Point defect gradients are presented as a mechanism consistent with the electrical data.

Original language	English (US)
Pages (from-to)	87-90
Number of pages	4
Journal	Applied Surface Science
Volume	224
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.08.044
State	Published - Mar 15 2004

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

Keywords

Boron
Diffusion
Polycrystalline
Segregation
Si Ge C

Access to Document

10.1016/j.apsusc.2003.08.044

Cite this

Stewart, E. J., & Sturm, J. C. (2004). Segregation of boron to polycrystalline and single-crystal Si _1-x-y Ge _x C _y and Si _1-y C _y layers Applied Surface Science, 224(1-4), 87-90. https://doi.org/10.1016/j.apsusc.2003.08.044

Stewart, E. J. ; Sturm, J. C. / Segregation of boron to polycrystalline and single-crystal Si _1-x-y Ge _x C _y and Si _1-y C _y layers In: Applied Surface Science. 2004 ; Vol. 224, No. 1-4. pp. 87-90.

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abstract = " Strong boron segregation to polycrystalline Si 1-x-y Ge x C y alloys from Si has previously been reported [MRS Symp. Proc. 669 (2001) J6.9]. In this study, we investigate potential mechanisms for this effect. We find that comparable segregation also occurs in both polycrystalline Si 1-y C y and single-crystal Si 1-x-y Ge x C y , indicating neither Ge nor grain boundary effects are needed for it to occur. In addition, the stability of the electrical properties of polycrystalline Si 1-x-y Ge x C y with annealing suggests that inactive B-C defects are not forming. Point defect gradients are presented as a mechanism consistent with the electrical data.",

keywords = "Boron, Diffusion, Polycrystalline, Segregation, Si Ge C",

author = "Stewart, {E. J.} and Sturm, {J. C.}",

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Stewart, EJ & Sturm, JC 2004, ' Segregation of boron to polycrystalline and single-crystal Si _1-x-y Ge _x C _y and Si _1-y C _y layers ', Applied Surface Science, vol. 224, no. 1-4, pp. 87-90. https://doi.org/10.1016/j.apsusc.2003.08.044

Segregation of boron to polycrystalline and single-crystal Si _1-x-y Ge _x C _y and Si _1-y C _y layers . / Stewart, E. J.; Sturm, J. C.
In: Applied Surface Science, Vol. 224, No. 1-4, 15.03.2004, p. 87-90.

Research output: Contribution to journal › Article › peer-review

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AU - Stewart, E. J.

AU - Sturm, J. C.

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N2 - Strong boron segregation to polycrystalline Si 1-x-y Ge x C y alloys from Si has previously been reported [MRS Symp. Proc. 669 (2001) J6.9]. In this study, we investigate potential mechanisms for this effect. We find that comparable segregation also occurs in both polycrystalline Si 1-y C y and single-crystal Si 1-x-y Ge x C y , indicating neither Ge nor grain boundary effects are needed for it to occur. In addition, the stability of the electrical properties of polycrystalline Si 1-x-y Ge x C y with annealing suggests that inactive B-C defects are not forming. Point defect gradients are presented as a mechanism consistent with the electrical data.

AB - Strong boron segregation to polycrystalline Si 1-x-y Ge x C y alloys from Si has previously been reported [MRS Symp. Proc. 669 (2001) J6.9]. In this study, we investigate potential mechanisms for this effect. We find that comparable segregation also occurs in both polycrystalline Si 1-y C y and single-crystal Si 1-x-y Ge x C y , indicating neither Ge nor grain boundary effects are needed for it to occur. In addition, the stability of the electrical properties of polycrystalline Si 1-x-y Ge x C y with annealing suggests that inactive B-C defects are not forming. Point defect gradients are presented as a mechanism consistent with the electrical data.

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Stewart EJ, Sturm JC. Segregation of boron to polycrystalline and single-crystal Si _1-x-y Ge _x C _y and Si _1-y C _y layers Applied Surface Science. 2004 Mar 15;224(1-4):87-90. doi: 10.1016/j.apsusc.2003.08.044