Scanning near-field optical spectroscopy measurements were carried out for photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots. Complex line spectra were observed to arise from ground state and excited state ecition complexes. The dot density was found to be about two orders of magnitude lower than in conventional (100) GaAs structures. It was observed that the InAs wetting layer (WL) was relatively rough which may indicate that the thin stress-matching AlAs pre-wetting layer that induced dot growth was not entirely effective.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Sep 27 2004|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)