Scanning near-field photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots

M. Hadjipanayi, A. C. Maciel, J. F. Ryan, D. Wasserman, Stephen Aplin Lyon

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Scanning near-field optical spectroscopy measurements were carried out for photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots. Complex line spectra were observed to arise from ground state and excited state ecition complexes. The dot density was found to be about two orders of magnitude lower than in conventional (100) GaAs structures. It was observed that the InAs wetting layer (WL) was relatively rough which may indicate that the thin stress-matching AlAs pre-wetting layer that induced dot growth was not entirely effective.

Original languageEnglish (US)
Pages (from-to)2535-2537
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number13
DOIs
StatePublished - Sep 27 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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