Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs

C. P. Moca, B. L. Sheu, N. Samarth, P. Schiffer, B. Janko, G. Zarand

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21 Scopus citations


We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.

Original languageEnglish (US)
Article number137203
JournalPhysical review letters
Issue number13
StatePublished - Mar 30 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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