Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs

C. P. Moca; B. L. Sheu; N. Samarth; P. Schiffer; B. Janko; G. Zarand

doi:10.1103/PhysRevLett.102.137203

Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs

C. P. Moca, B. L. Sheu, N. Samarth, P. Schiffer, B. Janko, G. Zarand

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.

Original language	English (US)
Article number	137203
Journal	Physical review letters
Volume	102
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevLett.102.137203
State	Published - Mar 30 2009
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.102.137203

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abstract = "We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.",

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AU - Sheu, B. L.

AU - Samarth, N.

AU - Schiffer, P.

AU - Janko, B.

AU - Zarand, G.

PY - 2009/3/30

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AB - We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.

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Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs

Abstract

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