Scaling of the conductivity with temperature and uniaxial stress in Si:B at the metal-insulator transition

S. Bogdanovich; M. P. Sarachik; R. N. Bhatt

doi:10.1103/PhysRevLett.82.137

Scaling of the conductivity with temperature and uniaxial stress in Si:B at the metal-insulator transition

S. Bogdanovich, M. P. Sarachik, R. N. Bhatt

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56 Scopus citations

Abstract

Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value S_c, we find the dc conductivity at low temperatures shows an excellent fit to the scaling form σ(S, T)=AT^xf[(S-S_c)/T^y] on both sides of the transition. The scaling functions yield reliable determinations of the temperature dependence of the conductivity in the metallic and insulating phases in the critical region.

Original language	English (US)
Pages (from-to)	137-140
Number of pages	4
Journal	Physical review letters
Volume	82
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.82.137
State	Published - 1999

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.82.137

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title = "Scaling of the conductivity with temperature and uniaxial stress in Si:B at the metal-insulator transition",

abstract = "Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value Sc, we find the dc conductivity at low temperatures shows an excellent fit to the scaling form σ(S, T)=ATxf[(S-Sc)/Ty] on both sides of the transition. The scaling functions yield reliable determinations of the temperature dependence of the conductivity in the metallic and insulating phases in the critical region.",

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AU - Bhatt, R. N.

PY - 1999

Y1 - 1999

N2 - Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value Sc, we find the dc conductivity at low temperatures shows an excellent fit to the scaling form σ(S, T)=ATxf[(S-Sc)/Ty] on both sides of the transition. The scaling functions yield reliable determinations of the temperature dependence of the conductivity in the metallic and insulating phases in the critical region.

AB - Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value Sc, we find the dc conductivity at low temperatures shows an excellent fit to the scaling form σ(S, T)=ATxf[(S-Sc)/Ty] on both sides of the transition. The scaling functions yield reliable determinations of the temperature dependence of the conductivity in the metallic and insulating phases in the critical region.

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Scaling of the conductivity with temperature and uniaxial stress in Si:B at the metal-insulator transition

Abstract

All Science Journal Classification (ASJC) codes

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