Scaling of the conductivity with temperature and uniaxial stress in Si:B at the metal-insulator transition

S. Bogdanovich, M. P. Sarachik, R. N. Bhatt

Research output: Contribution to journalArticle

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Abstract

Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value Sc, we find the dc conductivity at low temperatures shows an excellent fit to the scaling form σ(S, T)=ATxf[(S-Sc)/Ty] on both sides of the transition. The scaling functions yield reliable determinations of the temperature dependence of the conductivity in the metallic and insulating phases in the critical region.

Original languageEnglish (US)
Pages (from-to)137-140
Number of pages4
JournalPhysical review letters
Volume82
Issue number1
DOIs
StatePublished - Jan 1 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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