Abstract
Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value Sc, we find the dc conductivity at low temperatures shows an excellent fit to the scaling form σ(S, T)=ATxf[(S-Sc)/Ty] on both sides of the transition. The scaling functions yield reliable determinations of the temperature dependence of the conductivity in the metallic and insulating phases in the critical region.
Original language | English (US) |
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Pages (from-to) | 137-140 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 82 |
Issue number | 1 |
DOIs | |
State | Published - 1999 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy