Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value Sc, we find the dc conductivity at low temperatures shows an excellent fit to the scaling form σ(S, T)=ATxf[(S-Sc)/Ty] on both sides of the transition. The scaling functions yield reliable determinations of the temperature dependence of the conductivity in the metallic and insulating phases in the critical region.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical review letters|
|State||Published - 1999|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)