Scaling behavior of the magnetization of Si:B

A. Roy; M. P. Sarachik; R. N. Bhatt

doi:10.1016/0038-1098(86)90728-3

Scaling behavior of the magnetization of Si:B

A. Roy, M. P. Sarachik, R. N. Bhatt

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We show that the non-linear magnetization of acceptors in insulating Si:B exhibits a universal behavior similar to that found for donors in Si:P, for fields up to 50 kG and temperatures down to 1.25 K. Based on an extension to finite fields of the Bhatt and Lee scaling theory for the s = 1 2 donor system, we show that an equivalent calculation for j = 3 2 correctly predicts the magnetic properties of the acceptor system. This indicates that a model of hierarchically coupled spin pairs with renormalized interactions can provide a quantitative description of the magnetic behavior of acceptors as well as donors.

Original language	English (US)
Pages (from-to)	513-516
Number of pages	4
Journal	Solid State Communications
Volume	60
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(86)90728-3
State	Published - Nov 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(86)90728-3

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@article{e112a36cdf9947448adfc110465681d2,

title = "Scaling behavior of the magnetization of Si:B",

abstract = "We show that the non-linear magnetization of acceptors in insulating Si:B exhibits a universal behavior similar to that found for donors in Si:P, for fields up to 50 kG and temperatures down to 1.25 K. Based on an extension to finite fields of the Bhatt and Lee scaling theory for the s = 1 2 donor system, we show that an equivalent calculation for j = 3 2 correctly predicts the magnetic properties of the acceptor system. This indicates that a model of hierarchically coupled spin pairs with renormalized interactions can provide a quantitative description of the magnetic behavior of acceptors as well as donors.",

author = "A. Roy and Sarachik, {M. P.} and Bhatt, {R. N.}",

note = "Funding Information: City College for useful discussions. The work at City College was supported by the U.S. Department of Energy under grant No. DE-FG02-84ER45153 and by a grant from the PSC-CUNY Research Award Progam.",

year = "1986",

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T1 - Scaling behavior of the magnetization of Si:B

AU - Roy, A.

AU - Sarachik, M. P.

AU - Bhatt, R. N.

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PY - 1986/11

Y1 - 1986/11

N2 - We show that the non-linear magnetization of acceptors in insulating Si:B exhibits a universal behavior similar to that found for donors in Si:P, for fields up to 50 kG and temperatures down to 1.25 K. Based on an extension to finite fields of the Bhatt and Lee scaling theory for the s = 1 2 donor system, we show that an equivalent calculation for j = 3 2 correctly predicts the magnetic properties of the acceptor system. This indicates that a model of hierarchically coupled spin pairs with renormalized interactions can provide a quantitative description of the magnetic behavior of acceptors as well as donors.

AB - We show that the non-linear magnetization of acceptors in insulating Si:B exhibits a universal behavior similar to that found for donors in Si:P, for fields up to 50 kG and temperatures down to 1.25 K. Based on an extension to finite fields of the Bhatt and Lee scaling theory for the s = 1 2 donor system, we show that an equivalent calculation for j = 3 2 correctly predicts the magnetic properties of the acceptor system. This indicates that a model of hierarchically coupled spin pairs with renormalized interactions can provide a quantitative description of the magnetic behavior of acceptors as well as donors.

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DO - 10.1016/0038-1098(86)90728-3

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JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Scaling behavior of the magnetization of Si:B

Abstract

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