Scaling behavior of the magnetization of insulating Si:P

M. P. Sarachik; A. Roy; M. Turner; M. Levy; D. He; L. L. Isaacs; R. N. Bhatt

doi:10.1103/PhysRevB.34.387

Scaling behavior of the magnetization of insulating Si:P

M. P. Sarachik
, A. Roy
, M. Turner
, M. Levy
, D. He
, L. L. Isaacs
, R. N. Bhatt

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×1017 to 2.8×1018 cm-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.

Original language	English (US)
Pages (from-to)	387-390
Number of pages	4
Journal	Physical Review B
Volume	34
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevB.34.387
State	Published - 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.34.387

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title = "Scaling behavior of the magnetization of insulating Si:P",

abstract = "We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×1017 to 2.8×1018 cm-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.",

author = "Sarachik, \{M. P.\} and A. Roy and M. Turner and M. Levy and D. He and Isaacs, \{L. L.\} and Bhatt, \{R. N.\}",

year = "1986",

doi = "10.1103/PhysRevB.34.387",

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pages = "387--390",

journal = "Physical Review B",

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T1 - Scaling behavior of the magnetization of insulating Si:P

AU - Sarachik, M. P.

AU - Roy, A.

AU - Turner, M.

AU - Levy, M.

AU - He, D.

AU - Isaacs, L. L.

AU - Bhatt, R. N.

PY - 1986

Y1 - 1986

N2 - We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×1017 to 2.8×1018 cm-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.

AB - We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×1017 to 2.8×1018 cm-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.

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U2 - 10.1103/PhysRevB.34.387

DO - 10.1103/PhysRevB.34.387

M3 - Article

AN - SCOPUS:0039124945

SN - 0163-1829

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SP - 387

EP - 390

JO - Physical Review B

JF - Physical Review B

IS - 1

ER -

Scaling behavior of the magnetization of insulating Si:P

Abstract

All Science Journal Classification (ASJC) codes

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