We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×1017 to 2.8×1018 cm-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review B|
|State||Published - 1986|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics