Scaling behavior of the magnetization of insulating Si:P

M. P. Sarachik, A. Roy, M. Turner, M. Levy, D. He, L. L. Isaacs, R. N. Bhatt

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×1017 to 2.8×1018 cm-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.

Original languageEnglish (US)
Pages (from-to)387-390
Number of pages4
JournalPhysical Review B
Volume34
Issue number1
DOIs
StatePublished - 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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