Scaling behavior of the magnetization of insulating Si:P

M. P. Sarachik, A. Roy, M. Turner, M. Levy, D. He, L. L. Isaacs, R. N. Bhatt

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Abstract

We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×1017 to 2.8×1018 cm-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.

Original languageEnglish (US)
Pages (from-to)387-390
Number of pages4
JournalPhysical Review B
Volume34
Issue number1
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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    Sarachik, M. P., Roy, A., Turner, M., Levy, M., He, D., Isaacs, L. L., & Bhatt, R. N. (1986). Scaling behavior of the magnetization of insulating Si:P. Physical Review B, 34(1), 387-390. https://doi.org/10.1103/PhysRevB.34.387