Scaling behavior of the magnetization of insulating Si:P

M. P. Sarachik; A. Roy; M. Turner; M. Levy; D. He; L. L. Isaacs; R. N. Bhatt

doi:10.1103/PhysRevB.34.387

Scaling behavior of the magnetization of insulating Si:P

M. P. Sarachik, A. Roy, M. Turner, M. Levy, D. He, L. L. Isaacs, R. N. Bhatt

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35 Scopus citations

Abstract

We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×1017 to 2.8×1018 cm-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.

Original language	English (US)
Pages (from-to)	387-390
Number of pages	4
Journal	Physical Review B
Volume	34
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevB.34.387
State	Published - 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.34.387

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abstract = "We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×1017 to 2.8×1018 cm-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.",

author = "Sarachik, {M. P.} and A. Roy and M. Turner and M. Levy and D. He and Isaacs, {L. L.} and Bhatt, {R. N.}",

year = "1986",

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T1 - Scaling behavior of the magnetization of insulating Si:P

AU - Sarachik, M. P.

AU - Roy, A.

AU - Turner, M.

AU - Levy, M.

AU - He, D.

AU - Isaacs, L. L.

AU - Bhatt, R. N.

PY - 1986

Y1 - 1986

N2 - We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×1017 to 2.8×1018 cm-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.

AB - We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×1017 to 2.8×1018 cm-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.

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DO - 10.1103/PhysRevB.34.387

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JO - Physical Review B

JF - Physical Review B

IS - 1

ER -

Scaling behavior of the magnetization of insulating Si:P

Abstract

All Science Journal Classification (ASJC) codes

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