Scalable Gate Architecture for a One-Dimensional Array of Semiconductor Spin Qubits

D. M. Zajac, T. M. Hazard, X. Mi, E. Nielsen, J. R. Petta

Research output: Contribution to journalArticle

97 Scopus citations

Abstract

We demonstrate a 12-quantum-dot device fabricated on an undoped Si/SiGe heterostructure as a proof of concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of nine quantum dots in a linear array and three single-quantum-dot charge sensors. We show reproducible single-quantum-dot charging and orbital energies, with standard deviations less than 20% relative to the mean across the nine-dot array. The single-quantum-dot charge sensors have a charge sensitivity of 8.2×10-4 e/Hz and allow for the investigation of real-time charge dynamics. As a demonstration of the versatility of this device, we use single-shot readout to measure the spin-relaxation time T1=170 ms at a magnetic field B=1 T. By reconfiguring the device, we form two capacitively coupled double quantum dots and extract a mutual charging energy of 200 μeV, which indicates that 50-GHz two-qubit gate-operation speeds are feasible.

Original languageEnglish (US)
Article number054013
JournalPhysical Review Applied
Volume6
Issue number5
DOIs
StatePublished - Nov 28 2016

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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