We present a study of GaSb(100) surfaces grown by molecular beam epitaxy, protected by an Sb cap during ambient storage, and annealed in ultra-high vacuum. The surface structure, composition and electronic transitions are investigated with low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. Successful Sb-decapping is achieved by annealing at 300° C for 30 min. It leads to a (2 × 3)-c(2 × 6) reconstructed surface with less residual damage and higher Sb concentration than surfaces prepared by sputtering and annealing.
|Original language||English (US)|
|State||Published - Feb 15 1992|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry