Sb-capping and decapping of MBE-grown GaSb(100)

M. Dumas, M. Nouaoura, N. Bertru, L. Lassabatère, W. Chen, A. Kahn

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Abstract

We present a study of GaSb(100) surfaces grown by molecular beam epitaxy, protected by an Sb cap during ambient storage, and annealed in ultra-high vacuum. The surface structure, composition and electronic transitions are investigated with low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. Successful Sb-decapping is achieved by annealing at 300° C for 30 min. It leads to a (2 × 3)-c(2 × 6) reconstructed surface with less residual damage and higher Sb concentration than surfaces prepared by sputtering and annealing.

Original languageEnglish (US)
Pages (from-to)L91-L95
JournalSurface Science
Volume262
Issue number3
DOIs
StatePublished - Feb 15 1992

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Dumas, M., Nouaoura, M., Bertru, N., Lassabatère, L., Chen, W., & Kahn, A. (1992). Sb-capping and decapping of MBE-grown GaSb(100). Surface Science, 262(3), L91-L95. https://doi.org/10.1016/0039-6028(92)90114-L