Sb-capping and decapping of MBE-grown GaSb(100)

M. Dumas; M. Nouaoura; N. Bertru; L. Lassabatère; W. Chen; A. Kahn

doi:10.1016/0039-6028(92)90114-L

Sb-capping and decapping of MBE-grown GaSb(100)

M. Dumas, M. Nouaoura, N. Bertru, L. Lassabatère, W. Chen, A. Kahn

Research output: Contribution to journal › Article › peer-review

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Abstract

We present a study of GaSb(100) surfaces grown by molecular beam epitaxy, protected by an Sb cap during ambient storage, and annealed in ultra-high vacuum. The surface structure, composition and electronic transitions are investigated with low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. Successful Sb-decapping is achieved by annealing at 300° C for 30 min. It leads to a (2 × 3)-c(2 × 6) reconstructed surface with less residual damage and higher Sb concentration than surfaces prepared by sputtering and annealing.

Original language	English (US)
Pages (from-to)	L91-L95
Journal	Surface Science
Volume	262
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(92)90114-L
State	Published - Feb 15 1992

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(92)90114-L

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title = "Sb-capping and decapping of MBE-grown GaSb(100)",

abstract = "We present a study of GaSb(100) surfaces grown by molecular beam epitaxy, protected by an Sb cap during ambient storage, and annealed in ultra-high vacuum. The surface structure, composition and electronic transitions are investigated with low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. Successful Sb-decapping is achieved by annealing at 300° C for 30 min. It leads to a (2 × 3)-c(2 × 6) reconstructed surface with less residual damage and higher Sb concentration than surfaces prepared by sputtering and annealing.",

author = "M. Dumas and M. Nouaoura and N. Bertru and L. Lassabat{\`e}re and W. Chen and A. Kahn",

note = "Funding Information: This work was supported in part by a grant of the National Science Foundation (DMR-9018521).M .D. received support from NATO during his stay at Princeton University.",

year = "1992",

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TY - JOUR

T1 - Sb-capping and decapping of MBE-grown GaSb(100)

AU - Dumas, M.

AU - Nouaoura, M.

AU - Bertru, N.

AU - Lassabatère, L.

AU - Chen, W.

AU - Kahn, A.

N1 - Funding Information: This work was supported in part by a grant of the National Science Foundation (DMR-9018521).M .D. received support from NATO during his stay at Princeton University.

PY - 1992/2/15

Y1 - 1992/2/15

N2 - We present a study of GaSb(100) surfaces grown by molecular beam epitaxy, protected by an Sb cap during ambient storage, and annealed in ultra-high vacuum. The surface structure, composition and electronic transitions are investigated with low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. Successful Sb-decapping is achieved by annealing at 300° C for 30 min. It leads to a (2 × 3)-c(2 × 6) reconstructed surface with less residual damage and higher Sb concentration than surfaces prepared by sputtering and annealing.

AB - We present a study of GaSb(100) surfaces grown by molecular beam epitaxy, protected by an Sb cap during ambient storage, and annealed in ultra-high vacuum. The surface structure, composition and electronic transitions are investigated with low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. Successful Sb-decapping is achieved by annealing at 300° C for 30 min. It leads to a (2 × 3)-c(2 × 6) reconstructed surface with less residual damage and higher Sb concentration than surfaces prepared by sputtering and annealing.

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U2 - 10.1016/0039-6028(92)90114-L

DO - 10.1016/0039-6028(92)90114-L

M3 - Article

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VL - 262

SP - L91-L95

JO - Surface Science

JF - Surface Science

IS - 3

ER -

Sb-capping and decapping of MBE-grown GaSb(100)

Abstract

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