Abstract
Optical saturation experiments have been performed on hh1-hh2 intersubband transitions in two samples of p -doped GaAsAlGaAs quantum wells. The transitions had energies of 183 and 160 meV and the measured population relaxation times were 2±1.5 and 0.3±0.1 ps, respectively. Modeling of the quantum wells with a 6×6 kp method shows that intersubband scattering by LO phonons can account for these relaxation times. The valence bandstructure is typically more complicated than the conduction bandstructure in a quantum well but these measurements show that LO phonons are the dominant intersubband scattering mechanism in both cases.
Original language | English (US) |
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Article number | 183104 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 18 |
DOIs | |
State | Published - 2008 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)