Saturated ferromagnetism and magnetization deficit in optimally annealed Ga1-xMnxAs epilayers

S. J. Potashnik; K. C. Ku; R. Mahendiran; S. H. Chun; R. F. Wang; N. Samarth; P. Schiffer

doi:10.1103/PhysRevB.66.012408

Saturated ferromagnetism and magnetization deficit in optimally annealed Ga_1-xMn_xAs epilayers

S. J. Potashnik, K. C. Ku, R. Mahendiran, S. H. Chun, R. F. Wang, N. Samarth, P. Schiffer

Research output: Contribution to journal › Article › peer-review

144 Scopus citations

Abstract

We examine the Mn concentration dependence of the electronic and magnetic properties of optimally, annealed Ga_1-xMn_xAs epilayers for 1.35%≤x≤8.3%. The Curie temperature (T_c), conductivity, and exchange energy increase with Mn concentration up to x∼0.05, but are almost constant for larger x, with T_c ∼110 K. The ferromagnetic moment per Mn ion decreases monotonically with increasing x, implying that an increasing fraction of the Mn spins do not participate in the ferromagnetism. By contrast, the derived domain wall thickness, an important parameter for device design, remains surprisingly constant.

Original language	English (US)
Article number	012408
Pages (from-to)	124081-124084
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	66
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevB.66.012408
State	Published - Jul 1 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Saturated ferromagnetism and magnetization deficit in optimally annealed Ga1-xMnxAs epilayers",

abstract = "We examine the Mn concentration dependence of the electronic and magnetic properties of optimally, annealed Ga1-xMnxAs epilayers for 1.35%≤x≤8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn concentration up to x∼0.05, but are almost constant for larger x, with Tc ∼110 K. The ferromagnetic moment per Mn ion decreases monotonically with increasing x, implying that an increasing fraction of the Mn spins do not participate in the ferromagnetism. By contrast, the derived domain wall thickness, an important parameter for device design, remains surprisingly constant.",

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T1 - Saturated ferromagnetism and magnetization deficit in optimally annealed Ga1-xMnxAs epilayers

AU - Potashnik, S. J.

AU - Ku, K. C.

AU - Mahendiran, R.

AU - Chun, S. H.

AU - Wang, R. F.

AU - Samarth, N.

AU - Schiffer, P.

PY - 2002/7/1

Y1 - 2002/7/1

N2 - We examine the Mn concentration dependence of the electronic and magnetic properties of optimally, annealed Ga1-xMnxAs epilayers for 1.35%≤x≤8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn concentration up to x∼0.05, but are almost constant for larger x, with Tc ∼110 K. The ferromagnetic moment per Mn ion decreases monotonically with increasing x, implying that an increasing fraction of the Mn spins do not participate in the ferromagnetism. By contrast, the derived domain wall thickness, an important parameter for device design, remains surprisingly constant.

AB - We examine the Mn concentration dependence of the electronic and magnetic properties of optimally, annealed Ga1-xMnxAs epilayers for 1.35%≤x≤8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn concentration up to x∼0.05, but are almost constant for larger x, with Tc ∼110 K. The ferromagnetic moment per Mn ion decreases monotonically with increasing x, implying that an increasing fraction of the Mn spins do not participate in the ferromagnetism. By contrast, the derived domain wall thickness, an important parameter for device design, remains surprisingly constant.

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Saturated ferromagnetism and magnetization deficit in optimally annealed Ga_1-xMn_xAs epilayers

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