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RTCVD growth and applications of epitaxial Si
1-x
Ge
x
alloys
James C. Sturm
Electrical and Computer Engineering
Keller Center for Innovation in Engineering Education
Princeton Materials Institute
Research output
:
Contribution to journal
›
Article
›
peer-review
4
Scopus citations
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Dive into the research topics of 'RTCVD growth and applications of epitaxial Si
1-x
Ge
x
alloys'. Together they form a unique fingerprint.
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Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Heterojunctions
66%
Bipolar Transistor
66%
Emitting Device
33%
Band Edge
33%
Growth Temperature
33%
Layer Structure
33%
Epitaxial Film
33%
Strained Layer
33%
Homojunction
33%
Material Science
Silicon
100%
Thermal Chemical Vapor Deposition
100%
Heterojunction
66%
Bipolar Transistor
66%
Photoluminescence
33%
Film
33%
Superlattice
33%
Epitaxial Film
33%
Physics
Vapor Deposition
100%
Heterojunctions
66%
Bipolar Transistor
66%
Photoluminescence
33%
Energy Gaps (Solid State)
33%
Superlattice
33%
Ultrahigh Vacuum
33%
Chemical Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Growth Temperature
33%
Keyphrases
Competing Technologies
33%