RTCVD growth and applications of epitaxial Si1-xGex alloys

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Abstract

Rapid thermal chemical vapor deposition (RTCVD) is a competing technology for the growth of Si1-xGex strained-layer structures for the development of silicon-based heterojunctions. High-quality epitaxial films with growth temperatures as low as 600°C and 4.5 nm-period superlattices have been demonstrated without the use of ultrahigh-vacuum techniques. Narrow-bandgap-base heterojunction bipolar transistors made of Si/Si1-xGex/Si have been shown to have superior characteristics compared to all-silicon homojunction devices, and extend the scaling limits of bipolar transistors. Finally, RTCVD strained Si1-xGex films exhibit well-resolved band-edge photoluminescence-the first step on the way to developing silicon-based light-emitting devices.

Original languageEnglish (US)
Pages (from-to)44-47
Number of pages4
JournalJOM
Volume43
Issue number10
DOIs
StatePublished - Oct 1 1991

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

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