Room temperature silicon single-electron quantum-dot transistor switch

Lei Zhuang; Lingjie Guo; Stephen Y. Chou

Room temperature silicon single-electron quantum-dot transistor switch

Lei Zhuang, Lingjie Guo, Stephen Y. Chou

Research output: Contribution to journal › Conference article › peer-review

Abstract

We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. Analysis of its I-V characteristic indicates that the energy level separation is about 110 me V and the silicon dot size is about 12 nm.

Original language	English (US)
Pages (from-to)	167-170
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 1997
Externally published	Yes
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: Dec 7 1997 → Dec 10 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Room temperature silicon single-electron quantum-dot transistor switch",

abstract = "We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. Analysis of its I-V characteristic indicates that the energy level separation is about 110 me V and the silicon dot size is about 12 nm.",

author = "Lei Zhuang and Lingjie Guo and Chou, {Stephen Y.}",

year = "1997",

language = "English (US)",

pages = "167--170",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

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TY - JOUR

T1 - Room temperature silicon single-electron quantum-dot transistor switch

AU - Zhuang, Lei

AU - Guo, Lingjie

AU - Chou, Stephen Y.

PY - 1997

Y1 - 1997

N2 - We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. Analysis of its I-V characteristic indicates that the energy level separation is about 110 me V and the silicon dot size is about 12 nm.

AB - We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. Analysis of its I-V characteristic indicates that the energy level separation is about 110 me V and the silicon dot size is about 12 nm.

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M3 - Conference article

AN - SCOPUS:84886448115

SN - 0163-1918

SP - 167

EP - 170

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Room temperature silicon single-electron quantum-dot transistor switch

Abstract

All Science Journal Classification (ASJC) codes

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