Room temperature silicon single-electron quantum-dot transistor switch

Lei Zhuang, Lingjie Guo, Stephen Y. Chou

Research output: Contribution to journalConference article

13 Scopus citations

Abstract

We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. Analysis of its I-V characteristic indicates that the energy level separation is about 110 me V and the silicon dot size is about 12 nm.

Original languageEnglish (US)
Pages (from-to)167-170
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - Dec 1 1997
Externally publishedYes
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 7 1997Dec 10 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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