Room-temperature si single-electron memory fabricated by nanoimprint lithography

Wei Wu; Jian Gu; Haixiong Ge; Christopher Keimel; Stephen Y. Chou

doi:10.1063/1.1610814

Room-temperature si single-electron memory fabricated by nanoimprint lithography

Wei Wu, Jian Gu, Haixiong Ge, Christopher Keimel, Stephen Y. Chou

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

The design, fabrication and characterization of room-temperature Si single-electron memories (SEME) were reported. The nanoimprint lithography (NIL) was used. NIL was shown to be tailored for nanodevice fabrication. It was observed that by using NIL as a nanolithography tool, the single-electron memory was more feasible for mass production.

Original language	English (US)
Pages (from-to)	2268-2270
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	11
DOIs	https://doi.org/10.1063/1.1610814
State	Published - Sep 15 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1610814

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title = "Room-temperature si single-electron memory fabricated by nanoimprint lithography",

abstract = "The design, fabrication and characterization of room-temperature Si single-electron memories (SEME) were reported. The nanoimprint lithography (NIL) was used. NIL was shown to be tailored for nanodevice fabrication. It was observed that by using NIL as a nanolithography tool, the single-electron memory was more feasible for mass production.",

author = "Wei Wu and Jian Gu and Haixiong Ge and Christopher Keimel and Chou, {Stephen Y.}",

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AU - Wu, Wei

AU - Gu, Jian

AU - Ge, Haixiong

AU - Keimel, Christopher

AU - Chou, Stephen Y.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - The design, fabrication and characterization of room-temperature Si single-electron memories (SEME) were reported. The nanoimprint lithography (NIL) was used. NIL was shown to be tailored for nanodevice fabrication. It was observed that by using NIL as a nanolithography tool, the single-electron memory was more feasible for mass production.

AB - The design, fabrication and characterization of room-temperature Si single-electron memories (SEME) were reported. The nanoimprint lithography (NIL) was used. NIL was shown to be tailored for nanodevice fabrication. It was observed that by using NIL as a nanolithography tool, the single-electron memory was more feasible for mass production.

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EP - 2270

JO - Applied Physics Letters

JF - Applied Physics Letters

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Room-temperature si single-electron memory fabricated by nanoimprint lithography

Abstract

All Science Journal Classification (ASJC) codes

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