The design, fabrication and characterization of room-temperature Si single-electron memories (SEME) were reported. The nanoimprint lithography (NIL) was used. NIL was shown to be tailored for nanodevice fabrication. It was observed that by using NIL as a nanolithography tool, the single-electron memory was more feasible for mass production.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Sep 15 2003|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)