Room-temperature operation of λ≈3.7μm Ga0.47In0.53As/ Al0.48In0.52As quantum cascade laser sources

M. Jang; R. W. Adams; J. Z. Chen; C. Gmachl; L. Cheng; F. S. Choa; M. A. Belkin

doi:10.1364/cleo.2010.jtud87

Room-temperature operation of λ≈3.7μm Ga_0.47In_0.53As/ Al_0.48In_0.52As quantum cascade laser sources

M. Jang, R. W. Adams, J. Z. Chen, C. Gmachl, L. Cheng, F. S. Choa, M. A. Belkin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report room-temperature operation of λ≈3.7μm lattice-matched InGaAs/AlInAs/InP quantum cascade lasers based on frequency doubling with ~2mW/W₂ conversion efficiencies. Similar devices based on 1% strain-compensated materials can operate at λ=3-3.7μm.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2010
Publisher	Optical Society of America (OSA)
ISBN (Print)	9781557528896
DOIs	https://doi.org/10.1364/cleo.2010.jtud87
State	Published - 2010
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States Duration: May 16 2010 → May 21 2010

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2010
Country/Territory	United States
City	San Jose, CA
Period	5/16/10 → 5/21/10

All Science Journal Classification (ASJC) codes

Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.1364/cleo.2010.jtud87

Cite this

@inproceedings{cc606de9500e4d0fb13ad3a80ccb444e,

title = "Room-temperature operation of λ≈3.7μm Ga0.47In0.53As/ Al0.48In0.52As quantum cascade laser sources",

abstract = "We report room-temperature operation of λ≈3.7μm lattice-matched InGaAs/AlInAs/InP quantum cascade lasers based on frequency doubling with ~2mW/W2 conversion efficiencies. Similar devices based on 1% strain-compensated materials can operate at λ=3-3.7μm.",

author = "M. Jang and Adams, {R. W.} and Chen, {J. Z.} and C. Gmachl and L. Cheng and Choa, {F. S.} and Belkin, {M. A.}",

year = "2010",

doi = "10.1364/cleo.2010.jtud87",

language = "English (US)",

isbn = "9781557528896",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America (OSA)",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2010",

note = "Conference on Lasers and Electro-Optics, CLEO 2010 ; Conference date: 16-05-2010 Through 21-05-2010",

}

Jang, M, Adams, RW, Chen, JZ, Gmachl, C, Cheng, L, Choa, FS & Belkin, MA 2010, Room-temperature operation of λ≈3.7μm Ga_0.47In_0.53As/ Al_0.48In_0.52As quantum cascade laser sources. in Conference on Lasers and Electro-Optics, CLEO 2010. Optics InfoBase Conference Papers, Optical Society of America (OSA), Conference on Lasers and Electro-Optics, CLEO 2010, San Jose, CA, United States, 5/16/10. https://doi.org/10.1364/cleo.2010.jtud87

TY - GEN

T1 - Room-temperature operation of λ≈3.7μm Ga0.47In0.53As/ Al0.48In0.52As quantum cascade laser sources

AU - Jang, M.

AU - Adams, R. W.

AU - Chen, J. Z.

AU - Gmachl, C.

AU - Cheng, L.

AU - Choa, F. S.

AU - Belkin, M. A.

PY - 2010

Y1 - 2010

N2 - We report room-temperature operation of λ≈3.7μm lattice-matched InGaAs/AlInAs/InP quantum cascade lasers based on frequency doubling with ~2mW/W2 conversion efficiencies. Similar devices based on 1% strain-compensated materials can operate at λ=3-3.7μm.

AB - We report room-temperature operation of λ≈3.7μm lattice-matched InGaAs/AlInAs/InP quantum cascade lasers based on frequency doubling with ~2mW/W2 conversion efficiencies. Similar devices based on 1% strain-compensated materials can operate at λ=3-3.7μm.

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U2 - 10.1364/cleo.2010.jtud87

DO - 10.1364/cleo.2010.jtud87

M3 - Conference contribution

AN - SCOPUS:85086613006

SN - 9781557528896

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2010

PB - Optical Society of America (OSA)

T2 - Conference on Lasers and Electro-Optics, CLEO 2010

Y2 - 16 May 2010 through 21 May 2010

ER -