Room-temperature operation of λ≈3.7μm Ga 0.47 in 0.53 As/Al 0.48 in 0.52 As quantum cascade laser sources

M. Jang, R. W. Adams, J. Z. Chen, Claire F. Gmachl, L. Cheng, F. S. Choa, M. A. Belkin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report room-temperature operation of λ≈3.7μm lattice-matched InGaAs/AlInAs/InP quantum cascade lasers based on frequency doubling with ∼2mW/W 2 conversion efficiencies. Similar devices based on 1% strain-compensated materials can operate at λ=3-3.7μm.

Original languageEnglish (US)
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
StatePublished - Oct 11 2010
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Publication series

NameLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Other

OtherLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
CountryUnited States
CitySan Jose, CA
Period5/16/105/21/10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Radiation

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  • Cite this

    Jang, M., Adams, R. W., Chen, J. Z., Gmachl, C. F., Cheng, L., Choa, F. S., & Belkin, M. A. (2010). Room-temperature operation of λ≈3.7μm Ga 0.47 in 0.53 As/Al 0.48 in 0.52 As quantum cascade laser sources In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 [5499974] (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).