Room-temperature operation of λ≈3.7μm Ga
                        0.47
                        in 
                        0.53
                        As/Al
                        0.48
                        in
                        0.52
                        As quantum cascade laser sources

M. Jang; R. W. Adams; J. Z. Chen; Claire F. Gmachl; L. Cheng; F. S. Choa; M. A. Belkin

Room-temperature operation of λ≈3.7μm Ga _0.47 in _0.53 As/Al _0.48 in _0.52 As quantum cascade laser sources

M. Jang, R. W. Adams, J. Z. Chen, Claire F. Gmachl, L. Cheng, F. S. Choa, M. A. Belkin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report room-temperature operation of λ≈3.7μm lattice-matched InGaAs/AlInAs/InP quantum cascade lasers based on frequency doubling with ∼2mW/W ² conversion efficiencies. Similar devices based on 1% strain-compensated materials can operate at λ=3-3.7μm.

Original language	English (US)
Title of host publication	Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication	2010 Laser Science to Photonic Applications, CLEO/QELS 2010
State	Published - Oct 11 2010
Event	Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States Duration: May 16 2010 → May 21 2010

Publication series

Name	Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Other

Other	Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Country/Territory	United States
City	San Jose, CA
Period	5/16/10 → 5/21/10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Radiation

Cite this

Jang, M., Adams, R. W., Chen, J. Z., Gmachl, C. F., Cheng, L., Choa, F. S., & Belkin, M. A. (2010). Room-temperature operation of λ≈3.7μm Ga _0.47 in _0.53 As/Al _0.48 in _0.52 As quantum cascade laser sources In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 Article 5499974 (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).

Jang, M. ; Adams, R. W. ; Chen, J. Z. et al. / Room-temperature operation of λ≈3.7μm Ga _0.47 in _0.53 As/Al _0.48 in _0.52 As quantum cascade laser sources Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010. (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).

@inproceedings{5845fda8074440779f42b1c59066ddc0,

title = " Room-temperature operation of λ≈3.7μm Ga 0.47 in 0.53 As/Al 0.48 in 0.52 As quantum cascade laser sources ",

abstract = " We report room-temperature operation of λ≈3.7μm lattice-matched InGaAs/AlInAs/InP quantum cascade lasers based on frequency doubling with ∼2mW/W 2 conversion efficiencies. Similar devices based on 1% strain-compensated materials can operate at λ=3-3.7μm.",

author = "M. Jang and Adams, {R. W.} and Chen, {J. Z.} and Gmachl, {Claire F.} and L. Cheng and Choa, {F. S.} and Belkin, {M. A.}",

year = "2010",

month = oct,

day = "11",

language = "English (US)",

isbn = "9781557528902",

series = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010",

booktitle = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference",

note = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 ; Conference date: 16-05-2010 Through 21-05-2010",

}

Jang, M, Adams, RW, Chen, JZ, Gmachl, CF, Cheng, L, Choa, FS & Belkin, MA 2010, Room-temperature operation of λ≈3.7μm Ga _0.47 in _0.53 As/Al _0.48 in _0.52 As quantum cascade laser sources in Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010., 5499974, Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010, Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010, San Jose, CA, United States, 5/16/10.

Room-temperature operation of λ≈3.7μm Ga _0.47 in _0.53 As/Al _0.48 in _0.52 As quantum cascade laser sources . / Jang, M.; Adams, R. W.; Chen, J. Z. et al.
Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010. 5499974 (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Room-temperature operation of λ≈3.7μm Ga 0.47 in 0.53 As/Al 0.48 in 0.52 As quantum cascade laser sources

AU - Jang, M.

AU - Adams, R. W.

AU - Chen, J. Z.

AU - Gmachl, Claire F.

AU - Cheng, L.

AU - Choa, F. S.

AU - Belkin, M. A.

PY - 2010/10/11

Y1 - 2010/10/11

N2 - We report room-temperature operation of λ≈3.7μm lattice-matched InGaAs/AlInAs/InP quantum cascade lasers based on frequency doubling with ∼2mW/W 2 conversion efficiencies. Similar devices based on 1% strain-compensated materials can operate at λ=3-3.7μm.

AB - We report room-temperature operation of λ≈3.7μm lattice-matched InGaAs/AlInAs/InP quantum cascade lasers based on frequency doubling with ∼2mW/W 2 conversion efficiencies. Similar devices based on 1% strain-compensated materials can operate at λ=3-3.7μm.

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M3 - Conference contribution

AN - SCOPUS:77957589745

SN - 9781557528902

T3 - Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

BT - Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference

T2 - Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Y2 - 16 May 2010 through 21 May 2010

ER -

Jang M, Adams RW, Chen JZ, Gmachl CF, Cheng L, Choa FS et al. Room-temperature operation of λ≈3.7μm Ga _0.47 in _0.53 As/Al _0.48 in _0.52 As quantum cascade laser sources In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010. 5499974. (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).