Room temperature midinfrared electroluminescence from InAs quantum dots

D. Wasserman, T. Ribaudo, S. A. Lyon, S. K. Lyo, E. A. Shaner

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


We demonstrate room temperature midinfrared electroluminescence from intersublevel transitions in self-assembled InAs quantum dots. The dots are grown in GaAs/AlGaAs heterostructures designed to maximize current injection into dot excited states while preferentially removing electrons from the ground states. As such, these devices resemble quantum cascade lasers. However, rigorous modeling of carrier transport through the devices indicates that the current transport mechanism for quantum dot active regions differs from that of quantum-well-based midinfrared lasers. We present the calculated energy states and transport mechanism for an intersublevel quantum dot emitter, as well as experimental electroluminescence data for these structures.

Original languageEnglish (US)
Article number061101
JournalApplied Physics Letters
Issue number6
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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