Room-temperature, mid-infrared (λ=4.7 μm) electroluminescence from single-stage intersubband GaAs-based edge emitters

D. P. Xu, A. Mirabedini, M. D'Souza, S. Li, D. Botez, A. Lyakh, Y. J. Shen, P. Zory, Claire F. Gmachl

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

GaAs-based, single-stage, intersubband devices with active regions composed of deep quantum wells (i.e., In 0.3Ga 0.7As) and high AlGaAs barriers display strong room-temperature emission at λ=4.7 μm. The structures are grown by metalorganic chemical vapor deposition. The large energy barriers (∼360 meV) for electrons in the upper energy level of the active region strongly suppress both the carrier leakage as well as the tunneling escape rate out of the wells. As a result, the ratio of emissions at 80 and 300 K is as low as 2.0, and thus there is considerably less need for a Bragg mirror/transmitter-type region. Devices with virtually 100% tunneling injection efficiency have been realized, and their room-temperature spectra are narrow: 25 meV full width at half maximum. These deep-well, single-stage structures are intended for use as the emitting units in two-dimensional, intersubband quantum-box lasers, or as the stages of quantum-cascade lasers for efficient, room-temperature operation in the 3-5-μm wavelength range.

Original languageEnglish (US)
Pages (from-to)4573-4575
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number20
DOIs
StatePublished - Nov 15 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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