Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

Arvind P. Ravikumar; Guopeng Chen; Kuaile Zhao; Yue Tian; Paul Richard Prucnal; Maria C. Tamargo; Claire F. Gmachl; Aidong Shen

doi:10.1063/1.4802955

Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

Arvind P. Ravikumar, Guopeng Chen, Kuaile Zhao, Yue Tian, Paul Richard Prucnal, Maria C. Tamargo, Claire F. Gmachl, Aidong Shen

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Abstract

We report the experimental demonstration of a room temperature, high responsivity, short wavelength II-VI Zn_0.51Cd_0.49Se/ Zn_0.29Cd_0.26Mg_0.45Se based quantum well infrared photodetector operating between 3 and 5 μm. Spectral response was observed up to room temperature with a cut off wavelength of 5 μm at 280 K. Measurements with a calibrated blackbody source yielded a peak responsivity of over 30 A/W at 280 K and an applied bias of -3 V. The dark current limited peak detectivity at 80 K and 280 K were measured to be 2 × 10⁹ cm Hz/W and 4 × 10⁷ cm Hz/W, respectively. These results are consistent with theoretical calculations that predict a maximum detectivity of the order of 10⁷ cm Hz/W at room temperature for typical carrier lifetimes and optimized doping levels.

Original language	English (US)
Article number	161107
Journal	Applied Physics Letters
Volume	102
Issue number	16
DOIs	https://doi.org/10.1063/1.4802955
State	Published - Apr 22 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4802955

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@article{105ac0be15004baba16d05e2ad9f9658,

title = "Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector",

abstract = "We report the experimental demonstration of a room temperature, high responsivity, short wavelength II-VI Zn0.51Cd0.49Se/ Zn0.29Cd0.26Mg0.45Se based quantum well infrared photodetector operating between 3 and 5 μm. Spectral response was observed up to room temperature with a cut off wavelength of 5 μm at 280 K. Measurements with a calibrated blackbody source yielded a peak responsivity of over 30 A/W at 280 K and an applied bias of -3 V. The dark current limited peak detectivity at 80 K and 280 K were measured to be 2 × 109 cm Hz/W and 4 × 107 cm Hz/W, respectively. These results are consistent with theoretical calculations that predict a maximum detectivity of the order of 107 cm Hz/W at room temperature for typical carrier lifetimes and optimized doping levels.",

author = "Ravikumar, {Arvind P.} and Guopeng Chen and Kuaile Zhao and Yue Tian and Prucnal, {Paul Richard} and Tamargo, {Maria C.} and Gmachl, {Claire F.} and Aidong Shen",

note = "Funding Information: This work was supported in part by MIRTHE (NSF-ERC No. EEC-0540832), NSF Grant No. ECCS-1028364 and NSF Grant No. HRD-0833180.",

year = "2013",

month = apr,

day = "22",

doi = "10.1063/1.4802955",

language = "English (US)",

volume = "102",

journal = "Applied Physics Letters",

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T1 - Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

AU - Ravikumar, Arvind P.

AU - Chen, Guopeng

AU - Zhao, Kuaile

AU - Tian, Yue

AU - Prucnal, Paul Richard

AU - Tamargo, Maria C.

AU - Gmachl, Claire F.

AU - Shen, Aidong

N1 - Funding Information: This work was supported in part by MIRTHE (NSF-ERC No. EEC-0540832), NSF Grant No. ECCS-1028364 and NSF Grant No. HRD-0833180.

PY - 2013/4/22

Y1 - 2013/4/22

N2 - We report the experimental demonstration of a room temperature, high responsivity, short wavelength II-VI Zn0.51Cd0.49Se/ Zn0.29Cd0.26Mg0.45Se based quantum well infrared photodetector operating between 3 and 5 μm. Spectral response was observed up to room temperature with a cut off wavelength of 5 μm at 280 K. Measurements with a calibrated blackbody source yielded a peak responsivity of over 30 A/W at 280 K and an applied bias of -3 V. The dark current limited peak detectivity at 80 K and 280 K were measured to be 2 × 109 cm Hz/W and 4 × 107 cm Hz/W, respectively. These results are consistent with theoretical calculations that predict a maximum detectivity of the order of 107 cm Hz/W at room temperature for typical carrier lifetimes and optimized doping levels.

AB - We report the experimental demonstration of a room temperature, high responsivity, short wavelength II-VI Zn0.51Cd0.49Se/ Zn0.29Cd0.26Mg0.45Se based quantum well infrared photodetector operating between 3 and 5 μm. Spectral response was observed up to room temperature with a cut off wavelength of 5 μm at 280 K. Measurements with a calibrated blackbody source yielded a peak responsivity of over 30 A/W at 280 K and an applied bias of -3 V. The dark current limited peak detectivity at 80 K and 280 K were measured to be 2 × 109 cm Hz/W and 4 × 107 cm Hz/W, respectively. These results are consistent with theoretical calculations that predict a maximum detectivity of the order of 107 cm Hz/W at room temperature for typical carrier lifetimes and optimized doping levels.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 161107

ER -

Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

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