Room-temperature 1.3 μm electroluminescence from strained Si 1-xGex/Si quantum wells

Q. Mi, X. Xiao, J. C. Sturm, L. C. Lenchyshyn, M. L.W. Thewalt

Research output: Contribution to journalArticle

57 Scopus citations

Abstract

We report the first room-temperature 1.3 μm electroluminescence from strained Si1-xGex/Si quantum wells. The electroluminescence is due to band-edge carrier recombination, and its intensity increases linearly with the forward current up to 1700 A/cm2. The internal quantum efficiency is estimated to have a lower limit of 2×10-4. As the temperature is increased from 77 to 300 K, luminescence from the silicon increases relative to that from the Si 1-xGex wells. A minimum band offset is required to have effective room-temperature luminescence from the Si1-xGex quantum wells.

Original languageEnglish (US)
Pages (from-to)3177-3179
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number25
DOIs
StatePublished - Dec 1 1992
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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