Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films

M. Kröger; S. Hamwi; J. Meyer; T. Riedl; W. Kowalsky; A. Kahn

doi:10.1063/1.3231928

Role of the deep-lying electronic states of MoO₃ in the enhancement of hole-injection in organic thin films

M. Kröger
, S. Hamwi
, J. Meyer
, T. Riedl
, W. Kowalsky
, A. Kahn

Research output: Contribution to journal › Article › peer-review

652 Scopus citations

Abstract

The electronic structures of vacuum-deposited molybdenum trioxide (MoO ₃) and of a typical MoO₃ /hole transport material (HTM) interface are determined via ultraviolet and inverse photoelectron spectroscopy. Electron affinity and ionization energy of MoO₃ are found to be 6.7 and 9.68 eV, more than 4 eV larger than generally assumed, leading to a revised interpretation of the role of MoO₃ in hole injection in organic devices. The MoO₃ films are strongly n -type. The electronic structure of the oxide/HTM interface shows that hole injection proceeds via electron extraction from the HTM highest occupied molecular orbital through the low-lying conduction band of MoO₃.

Original language	English (US)
Article number	123301
Journal	Applied Physics Letters
Volume	95
Issue number	12
DOIs	https://doi.org/10.1063/1.3231928
State	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3231928

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title = "Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films",

abstract = "The electronic structures of vacuum-deposited molybdenum trioxide (MoO 3) and of a typical MoO3 /hole transport material (HTM) interface are determined via ultraviolet and inverse photoelectron spectroscopy. Electron affinity and ionization energy of MoO3 are found to be 6.7 and 9.68 eV, more than 4 eV larger than generally assumed, leading to a revised interpretation of the role of MoO3 in hole injection in organic devices. The MoO3 films are strongly n -type. The electronic structure of the oxide/HTM interface shows that hole injection proceeds via electron extraction from the HTM highest occupied molecular orbital through the low-lying conduction band of MoO3.",

author = "M. Kr{\"o}ger and S. Hamwi and J. Meyer and T. Riedl and W. Kowalsky and A. Kahn",

note = "Funding Information: Work in Princeton was supported by the National Science Foundation (Grant No. DMR-0705920) and the Princeton MRSEC of the NSF (Grant No. DMR-0819860). Work in Braunschweig was funded by the German Federal Ministry for Education and Research (Contract No. 13N8166A). M.K. acknowledges the German Academic Exchange Service (DAAD) for generous support within the postdoctoral fellowship program. ",

year = "2009",

doi = "10.1063/1.3231928",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

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TY - JOUR

T1 - Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films

AU - Kröger, M.

AU - Hamwi, S.

AU - Meyer, J.

AU - Riedl, T.

AU - Kowalsky, W.

AU - Kahn, A.

N1 - Funding Information: Work in Princeton was supported by the National Science Foundation (Grant No. DMR-0705920) and the Princeton MRSEC of the NSF (Grant No. DMR-0819860). Work in Braunschweig was funded by the German Federal Ministry for Education and Research (Contract No. 13N8166A). M.K. acknowledges the German Academic Exchange Service (DAAD) for generous support within the postdoctoral fellowship program.

PY - 2009

Y1 - 2009

N2 - The electronic structures of vacuum-deposited molybdenum trioxide (MoO 3) and of a typical MoO3 /hole transport material (HTM) interface are determined via ultraviolet and inverse photoelectron spectroscopy. Electron affinity and ionization energy of MoO3 are found to be 6.7 and 9.68 eV, more than 4 eV larger than generally assumed, leading to a revised interpretation of the role of MoO3 in hole injection in organic devices. The MoO3 films are strongly n -type. The electronic structure of the oxide/HTM interface shows that hole injection proceeds via electron extraction from the HTM highest occupied molecular orbital through the low-lying conduction band of MoO3.

AB - The electronic structures of vacuum-deposited molybdenum trioxide (MoO 3) and of a typical MoO3 /hole transport material (HTM) interface are determined via ultraviolet and inverse photoelectron spectroscopy. Electron affinity and ionization energy of MoO3 are found to be 6.7 and 9.68 eV, more than 4 eV larger than generally assumed, leading to a revised interpretation of the role of MoO3 in hole injection in organic devices. The MoO3 films are strongly n -type. The electronic structure of the oxide/HTM interface shows that hole injection proceeds via electron extraction from the HTM highest occupied molecular orbital through the low-lying conduction band of MoO3.

UR - https://www.scopus.com/pages/publications/70349655699

UR - https://www.scopus.com/pages/publications/70349655699#tab=citedBy

U2 - 10.1063/1.3231928

DO - 10.1063/1.3231928

M3 - Article

AN - SCOPUS:70349655699

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123301

ER -

Role of the deep-lying electronic states of MoO₃ in the enhancement of hole-injection in organic thin films

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