The electronic structures of vacuum-deposited molybdenum trioxide (MoO 3) and of a typical MoO3 /hole transport material (HTM) interface are determined via ultraviolet and inverse photoelectron spectroscopy. Electron affinity and ionization energy of MoO3 are found to be 6.7 and 9.68 eV, more than 4 eV larger than generally assumed, leading to a revised interpretation of the role of MoO3 in hole injection in organic devices. The MoO3 films are strongly n -type. The electronic structure of the oxide/HTM interface shows that hole injection proceeds via electron extraction from the HTM highest occupied molecular orbital through the low-lying conduction band of MoO3.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2009|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)