Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films

M. Kröger, S. Hamwi, J. Meyer, T. Riedl, W. Kowalsky, A. Kahn

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Abstract

The electronic structures of vacuum-deposited molybdenum trioxide (MoO 3) and of a typical MoO3 /hole transport material (HTM) interface are determined via ultraviolet and inverse photoelectron spectroscopy. Electron affinity and ionization energy of MoO3 are found to be 6.7 and 9.68 eV, more than 4 eV larger than generally assumed, leading to a revised interpretation of the role of MoO3 in hole injection in organic devices. The MoO3 films are strongly n -type. The electronic structure of the oxide/HTM interface shows that hole injection proceeds via electron extraction from the HTM highest occupied molecular orbital through the low-lying conduction band of MoO3.

Original languageEnglish (US)
Article number123301
JournalApplied Physics Letters
Volume95
Issue number12
DOIs
StatePublished - Oct 12 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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