Role of sidewall scattering in feature profile evolution during Cl2 and HBr plasma etching of silicon

M. A. Vyvoda, M. Li, D. B. Graves, H. Lee, M. V. Malyshev, F. P. Klemens, J. T.C. Lee, V. M. Donnelly

Research output: Contribution to journalArticlepeer-review

59 Scopus citations

Abstract

A numerical simulation consisting of two-dimensional axisymmetric fluid plasma simulation is presented for the prediction of the fluxes and energies of particle impingement upon surfaces bounding the plasma. The plasma simulation is coupled to a feature profile evolution simulation for the accurate prediction of etch rate and shape. A reactor-and feature-scale model of crystalline silicon profiles are described. Isolated trench and line etching with Cl2 and HBr plasmas were then compared to experimental results for the prediction of microtrench-free high aspect ratio trench etching in HBr contrasted with the occurrence of deep microtrenching in Cl2 plasmas.

Original languageEnglish (US)
Pages (from-to)820-833
Number of pages14
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number2
DOIs
StatePublished - Mar 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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