Abstract
The chemistry and electronic structure of interfaces between Al and copper hexadecafluorophthalocyanine (F16CuPc) are studied via x-ray photoemission spectroscopy, ultraviolet photoemission spectroscopy (UPS), and current-voltage measurements. Electron injection barriers measured by UPS are reported. Analysis of the Al-F16CuPc reaction shows the formation of a phase of three-dimensional (F16CuPc)3Al species. The reacted region is extended at the Al-on-F16CuPc interface and narrow at the F16CuPc-on-Al interface. A series of metal/F16CuPc/metal structures is fabricated to study the impact of the interface chemistry and deposition sequence on device performances. It is found that (F16CuPc)3Al forms a low conductivity region, which has considerable bearing on the electron current. The interface fabrication sequence, which defines the thickness of the reacted region, therefore has a profound impact on device performance.
Original language | English (US) |
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Pages (from-to) | 6236-6242 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 90 |
Issue number | 12 |
DOIs | |
State | Published - Dec 15 2001 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy