Role of finite layer thickness in spin polarization of GaAs two-dimensional electrons in strong parallel magnetic fields

E. Tutuc, S. Melinte, E. P. De Poortere, M. Shayegan, R. Winkler

Research output: Contribution to journalArticle

65 Scopus citations

Abstract

We report measurements and calculations of the spin polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g factor, and a nonlinear spin polarization with field.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number24
DOIs
StatePublished - Jun 26 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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