TY - JOUR
T1 - Role of finite layer thickness in spin polarization of GaAs two-dimensional electrons in strong parallel magnetic fields
AU - Tutuc, E.
AU - Melinte, S.
AU - De Poortere, E. P.
AU - Shayegan, M.
AU - Winkler, R.
PY - 2003/6/26
Y1 - 2003/6/26
N2 - We report measurements and calculations of the spin polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g factor, and a nonlinear spin polarization with field.
AB - We report measurements and calculations of the spin polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g factor, and a nonlinear spin polarization with field.
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U2 - 10.1103/PhysRevB.67.241309
DO - 10.1103/PhysRevB.67.241309
M3 - Article
AN - SCOPUS:0042028388
SN - 1098-0121
VL - 67
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 24
ER -