Role of etch products in polysilicon etching in a high-density chlorine discharge

Engineering & Materials Science

• Chlorine 100%
• Density (specific gravity) 99%
• Polysilicon 94%
• Etching 87%
• Plasma density 65%
• Surface chemistry 53%
• Silicon 48%
• Electron temperature 35%
• Electrons 20%
• Deposits 20%
• Plasmas 18%
• Ions 18%
• Fluxes 16%
• Gases 11%

Chemical Compounds

• Etching 73%
• Chlorine 71%
• Surface Chemistry 49%
• Elemental Silicon 45%
• Electron Temperature 42%
• Degree of Dissociation 37%
• Plasma 33%
• Residence Time 28%
• Collision 27%
• Surface 26%
• Pressure 15%
• Electron Particle 14%
• Gas 14%
• Ion 10%

Physics & Astronomy

• chlorine 86%
• etching 61%
• products 52%
• wafers 30%
• plasma density 26%
• chemistry 23%
• silicon 21%
• chambers 21%
• deposits 12%
• low pressure 11%
• dissociation 11%
• vapor phases 10%
• electron energy 10%
• collisions 8%
• ions 6%
• electrons 5%