Role of electron and hole collecting buffer layers on the stability of inverted polymer: Fullerene photovoltaic devices

Eszter Voroshazi, Ilaria Cardinaletti, Griet Uytterhoeven, Afshin Hadipour, Barry P. Rand, Tom Aernouts

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Systematic device performance and air stability comparison of inverted architecture P3HT:PCBM cells with six different electron collecting layers (ECL) and two hole collecting layers are presented in this study. Regardless of the ECL, we achieved an efficiency of over 3.5% and lifetime of over 1000 h. These results prove the interchangeability of different ECLs (TiOx, ZnO and PFN). Over 5000 h long air exposure revealed a secondary failure of inverted cells. Notably, devices with PEDOT:PSS/Ag/Al electrode exhibited the longest lifetime of 4000 h compared to 3000 h with MoO3/Ag/Al.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3212-3215
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Externally publishedYes
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL
Period6/16/136/21/13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Keywords

  • Degradation
  • Interface phenomena
  • Organic semiconductors
  • Oxygen
  • Photovoltaic cells

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