Robust Quantum Hall Ferromagnetism near a Gate-Tuned ν=1 Landau Level Crossing

Meng K. Ma, Chengyu Wang, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler, M. Shayegan

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is determined by the exchange energy and has skyrmions as its excitations. This is normally achieved via applying either hydrostatic pressure or uniaxial strain. We study here a very high-quality, low-density, two-dimensional hole system, confined to a 30-nm-wide (001) GaAs quantum well, in which the two lowest-energy Landau levels can be gate tuned to cross at and near filling factor ν=1. As we tune the field position of the crossing from one side of ν=1 to the other by changing the hole density, the energy gap for the quantum Hall state at ν=1 remains exceptionally large, and only shows a small dip near the crossing. The gap overall follows a B dependence, expected for the exchange energy. Our data are consistent with a robust quantum Hall ferromagnet as the ground state.

Original languageEnglish (US)
Article number196801
JournalPhysical review letters
Volume129
Issue number19
DOIs
StatePublished - Nov 4 2022
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Robust Quantum Hall Ferromagnetism near a Gate-Tuned ν=1 Landau Level Crossing'. Together they form a unique fingerprint.

Cite this