Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6

Mario M. Piva; Marein C. Rahn; Sean M. Thomas; Brian L. Scott; Pascoal G. Pagliuso; Joe D. Thompson; Leslie M. Schoop; Filip Ronning; Priscila F.S. Rosa

doi:10.1021/acs.chemmater.1c00797

Robust Narrow-Gap Semiconducting Behavior in Square-Net La₃Cd₂As₆

Mario M. Piva, Marein C. Rahn, Sean M. Thomas, Brian L. Scott, Pascoal G. Pagliuso, Joe D. Thompson, Leslie M. Schoop, Filip Ronning, Priscila F.S. Rosa

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently nontrivial topology. Here, we report the synthesis and characterization of a new family of narrow-gap semiconductors, R3Cd2As6 (R = La and Ce). Single-crystal X-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279 K in La3Cd2As6 and at 136 K in Ce3Cd2As6 and is accompanied by a substantial increase in the electrical resistivity in both compounds. The resistivity of the La member increases by 13 orders of magnitude on cooling, which points to a remarkably clean semiconducting ground state. Our results suggest that light square-net materials within an I4/mmm parent structure are promising clean narrow-gap semiconductors.

Original language	English (US)
Pages (from-to)	4122-4127
Number of pages	6
Journal	Chemistry of Materials
Volume	33
Issue number	11
DOIs	https://doi.org/10.1021/acs.chemmater.1c00797
State	Published - Jun 8 2021

All Science Journal Classification (ASJC) codes

General Chemistry
General Chemical Engineering
Materials Chemistry

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title = "Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6",

abstract = "Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently nontrivial topology. Here, we report the synthesis and characterization of a new family of narrow-gap semiconductors, R3Cd2As6 (R = La and Ce). Single-crystal X-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279 K in La3Cd2As6 and at 136 K in Ce3Cd2As6 and is accompanied by a substantial increase in the electrical resistivity in both compounds. The resistivity of the La member increases by 13 orders of magnitude on cooling, which points to a remarkably clean semiconducting ground state. Our results suggest that light square-net materials within an I4/mmm parent structure are promising clean narrow-gap semiconductors.",

author = "Piva, {Mario M.} and Rahn, {Marein C.} and Thomas, {Sean M.} and Scott, {Brian L.} and Pagliuso, {Pascoal G.} and Thompson, {Joe D.} and Schoop, {Leslie M.} and Filip Ronning and Rosa, {Priscila F.S.}",

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doi = "10.1021/acs.chemmater.1c00797",

language = "English (US)",

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T1 - Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6

AU - Piva, Mario M.

AU - Rahn, Marein C.

AU - Thomas, Sean M.

AU - Scott, Brian L.

AU - Pagliuso, Pascoal G.

AU - Thompson, Joe D.

AU - Schoop, Leslie M.

AU - Ronning, Filip

AU - Rosa, Priscila F.S.

PY - 2021/6/8

Y1 - 2021/6/8

N2 - Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently nontrivial topology. Here, we report the synthesis and characterization of a new family of narrow-gap semiconductors, R3Cd2As6 (R = La and Ce). Single-crystal X-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279 K in La3Cd2As6 and at 136 K in Ce3Cd2As6 and is accompanied by a substantial increase in the electrical resistivity in both compounds. The resistivity of the La member increases by 13 orders of magnitude on cooling, which points to a remarkably clean semiconducting ground state. Our results suggest that light square-net materials within an I4/mmm parent structure are promising clean narrow-gap semiconductors.

AB - Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently nontrivial topology. Here, we report the synthesis and characterization of a new family of narrow-gap semiconductors, R3Cd2As6 (R = La and Ce). Single-crystal X-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279 K in La3Cd2As6 and at 136 K in Ce3Cd2As6 and is accompanied by a substantial increase in the electrical resistivity in both compounds. The resistivity of the La member increases by 13 orders of magnitude on cooling, which points to a remarkably clean semiconducting ground state. Our results suggest that light square-net materials within an I4/mmm parent structure are promising clean narrow-gap semiconductors.

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JF - Chemistry of Materials

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ER -

Robust Narrow-Gap Semiconducting Behavior in Square-Net La₃Cd₂As₆

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