RIE of sub-50 nm high aspect-ratio pillars, ridges, and trenches in silicon and silicon-germanium

P. B. Fischer; S. Y. Chou

doi:10.1016/0167-9317(93)90080-O

RIE of sub-50 nm high aspect-ratio pillars, ridges, and trenches in silicon and silicon-germanium

P. B. Fischer
, S. Y. Chou

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Sub-50 nm high aspect-ratio pillars, ridges, and trenches have been patterned in Si and SiGe using reactive ion etching (RIE) with Cr masks defined by ultra-high resolution electron beam lithography and a lift-off process. Using an optimized mixture of Cl₂ and SiCl₄ gases, sub-50 nm features with aspect ratios greater than 10 were readily and consistently achieved. For achieving similar nanostructures in SiGe, an identical gas mixture at lower pressures is required.

Original language	English (US)
Pages (from-to)	311-314
Number of pages	4
Journal	Microelectronic Engineering
Volume	21
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(93)90080-O
State	Published - Apr 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(93)90080-O

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title = "RIE of sub-50 nm high aspect-ratio pillars, ridges, and trenches in silicon and silicon-germanium",

abstract = "Sub-50 nm high aspect-ratio pillars, ridges, and trenches have been patterned in Si and SiGe using reactive ion etching (RIE) with Cr masks defined by ultra-high resolution electron beam lithography and a lift-off process. Using an optimized mixture of Cl2 and SiCl4 gases, sub-50 nm features with aspect ratios greater than 10 were readily and consistently achieved. For achieving similar nanostructures in SiGe, an identical gas mixture at lower pressures is required.",

author = "Fischer, \{P. B.\} and Chou, \{S. Y.\}",

note = "Funding Information: We would like to thank Dr. Ted Kamins of Hewlett Packard for the growth of the SiGe samples. The work was partly supported by a Packard Fellowship, SRC, IBM, and ARO, and AFOSR through an Air Force Laboratory Graduate Fellowship to PBF.",

year = "1993",

month = apr,

doi = "10.1016/0167-9317(93)90080-O",

language = "English (US)",

volume = "21",

pages = "311--314",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-4",

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TY - JOUR

T1 - RIE of sub-50 nm high aspect-ratio pillars, ridges, and trenches in silicon and silicon-germanium

AU - Fischer, P. B.

AU - Chou, S. Y.

N1 - Funding Information: We would like to thank Dr. Ted Kamins of Hewlett Packard for the growth of the SiGe samples. The work was partly supported by a Packard Fellowship, SRC, IBM, and ARO, and AFOSR through an Air Force Laboratory Graduate Fellowship to PBF.

PY - 1993/4

Y1 - 1993/4

N2 - Sub-50 nm high aspect-ratio pillars, ridges, and trenches have been patterned in Si and SiGe using reactive ion etching (RIE) with Cr masks defined by ultra-high resolution electron beam lithography and a lift-off process. Using an optimized mixture of Cl2 and SiCl4 gases, sub-50 nm features with aspect ratios greater than 10 were readily and consistently achieved. For achieving similar nanostructures in SiGe, an identical gas mixture at lower pressures is required.

AB - Sub-50 nm high aspect-ratio pillars, ridges, and trenches have been patterned in Si and SiGe using reactive ion etching (RIE) with Cr masks defined by ultra-high resolution electron beam lithography and a lift-off process. Using an optimized mixture of Cl2 and SiCl4 gases, sub-50 nm features with aspect ratios greater than 10 were readily and consistently achieved. For achieving similar nanostructures in SiGe, an identical gas mixture at lower pressures is required.

UR - https://www.scopus.com/pages/publications/0027579512

UR - https://www.scopus.com/pages/publications/0027579512#tab=citedBy

U2 - 10.1016/0167-9317(93)90080-O

DO - 10.1016/0167-9317(93)90080-O

M3 - Article

AN - SCOPUS:0027579512

SN - 0167-9317

VL - 21

SP - 311

EP - 314

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

RIE of sub-50 nm high aspect-ratio pillars, ridges, and trenches in silicon and silicon-germanium

Abstract

All Science Journal Classification (ASJC) codes

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