RIE of sub-50 nm high aspect-ratio pillars, ridges, and trenches in silicon and silicon-germanium

P. B. Fischer, S. Y. Chou

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Sub-50 nm high aspect-ratio pillars, ridges, and trenches have been patterned in Si and SiGe using reactive ion etching (RIE) with Cr masks defined by ultra-high resolution electron beam lithography and a lift-off process. Using an optimized mixture of Cl2 and SiCl4 gases, sub-50 nm features with aspect ratios greater than 10 were readily and consistently achieved. For achieving similar nanostructures in SiGe, an identical gas mixture at lower pressures is required.

Original languageEnglish (US)
Pages (from-to)311-314
Number of pages4
JournalMicroelectronic Engineering
Volume21
Issue number1-4
DOIs
StatePublished - Apr 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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