Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad

G. Batignani; L. Bosisio; M. Carpinelli; C. Diaconu; P. Elmer; F. Forti; M. A. Giorgi; G. Rizzo; G. Triggiani

doi:10.1007/BF02773517

Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad

G. Batignani, L. Bosisio, M. Carpinelli, C. Diaconu, P. Elmer, F. Forti, M. A. Giorgi, G. Rizzo, G. Triggiani

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We irradiated with photons from a ⁶⁰Co source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm², mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.

Original language	English (US)
Pages (from-to)	1309-1318
Number of pages	10
Journal	La Rivista del Nuovo Cimento
Volume	109
Issue number	9
DOIs	https://doi.org/10.1007/BF02773517
State	Published - Sep 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Nuclear and High Energy Physics
Astronomy and Astrophysics

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10.1007/BF02773517

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title = "Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad",

abstract = "We irradiated with photons from a 60Co source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm2, mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.",

author = "G. Batignani and L. Bosisio and M. Carpinelli and C. Diaconu and P. Elmer and F. Forti and Giorgi, {M. A.} and G. Rizzo and G. Triggiani",

year = "1996",

month = sep,

doi = "10.1007/BF02773517",

language = "English (US)",

volume = "109",

pages = "1309--1318",

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T1 - Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad

AU - Batignani, G.

AU - Bosisio, L.

AU - Carpinelli, M.

AU - Diaconu, C.

AU - Elmer, P.

AU - Forti, F.

AU - Giorgi, M. A.

AU - Rizzo, G.

AU - Triggiani, G.

PY - 1996/9

Y1 - 1996/9

N2 - We irradiated with photons from a 60Co source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm2, mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.

AB - We irradiated with photons from a 60Co source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm2, mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.

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JO - La Rivista del Nuovo Cimento

JF - La Rivista del Nuovo Cimento

IS - 9

ER -

Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad

Abstract

All Science Journal Classification (ASJC) codes

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