Abstract
Microwave-induced resistance oscillations (MIROs) have been commonly observed in high-mobility GaAs/AlGaAs two-dimensional electron systems (2DESs) under microwave irradiation. In ultraclean GaAs/AlGaAs quantum wells, we have recently observed a very large resistance spike at the second harmonic of cyclotron resonance. In order to elucidate its origin, we have studied the response of microwave photoresistances in a two-axis magnetic field configuration, where the perpendicular (B z) and the in-plane (B x) components can be independently applied to the sample. The experiments reveal a distinctive response of the spike to the B x compared with that of the MIROs. While the major MIRO peaks show an increasing phase shift toward a quarter period in increasing B x, the spike position shows an essentially zero shift. This finding lends additional support for the notion that the spike is a unique effect in the microwave-driven 2DES.
Original language | English (US) |
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Article number | 241303 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 84 |
Issue number | 24 |
DOIs | |
State | Published - Dec 7 2011 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics