@article{36b3265583bc4635bac40d74702225bb,
title = "Resonantly driven CNOT gate for electron spins",
abstract = "Single-qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. Although high-fidelity single-qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been challenging because of rapid nuclear spin dephasing and charge noise.We demonstrate an efficient resonantly driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities greater than 99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 nanoseconds. We used the CNOT gate to generate a Bell state with 78% fidelity (corrected for errors in state preparation and measurement). Our quantum dot device architecture enables multi-qubit algorithms in silicon.",
author = "Zajac, {D. M.} and Sigillito, {A. J.} and M. Russ and F. Borjans and Taylor, {J. M.} and G. Burkard and Petta, {J. R.}",
note = "Funding Information: We thank T. Hazard, J. Stehlik, and K. Wang for technical assistance. Research was sponsored by Army Research Office grant W911NF-15-1-0149, the Gordon and Betty Moore Foundation{\textquoteright}s EPiQS Initiative through grant GBMF4535, and NSF grant DMR-1409556. Devices were fabricated in the Princeton University Quantum Device Nanofabrication Laboratory. Any mention of commercial products is for information only; it does not imply recommendation or endorsement by NIST. The data that support the findings of this study are available in the supplementary materials. Additional data can be obtained from the corresponding author upon request. Funding Information: We thank T. Hazard, J. Stehlik, and K. Wang for technical assistance. Research was sponsored by Army Research Office grant W911NF-15-1-0149, the Gordon and Betty Moore Foundation's EPiQS Initiative through grant GBMF4535, and NSF grant DMR-1409556. Devices were fabricated in the Princeton University Quantum Device Nanofabrication Laboratory. Any mention of commercial products is for information only; it does not imply recommendation or endorsement by NIST. The data that support the findings of this study are available in the supplementary materials. Additional data can be obtained from the corresponding author upon request. Publisher Copyright: {\textcopyright} The Authors, some rights reserved.",
year = "2018",
month = jan,
day = "26",
doi = "10.1126/science.aao5965",
language = "English (US)",
volume = "359",
pages = "439--442",
journal = "Science",
issn = "0036-8075",
publisher = "American Association for the Advancement of Science",
number = "6374",
}