Resonant tunneling into a biased fractional quantum Hall edge

D. C. Tsui, L. N. Pfeiffer, K. W. West, M. Grayson, A. M. Chang

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


The voltage dependence of a new type of resonance at a sharp fractional quantum Hall effect (FQHE) edge was characterized. Clear non-Fermi liquid (non-FL) behavior through line shape analysis and nonconservation of resonance area was demonstrated.

Original languageEnglish (US)
Pages (from-to)2645-2648
Number of pages4
JournalPhysical review letters
Issue number12
StatePublished - Mar 19 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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