We have fabricated submicron resonant tunneling devices from double-barrier AlGaAs/GaAs heterostructures using electron beam lithography and wet chemical etching. These devices exhibit step-like features in the current-voltage curves. We interpret these steps as arising from additional size quantization of the electronic states in the well due to in-plane lithographic confinement. Magnetotunneling experiments on these devices are reported for the first time. A simple model calculation describes well the experimental data.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1991|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)