Resonant tunneling in submicron double-barrier heterostructures

Bo Su, V. J. Goldman, M. Santos, M. Shayegan

Research output: Contribution to journalArticle

67 Scopus citations

Abstract

We have fabricated submicron resonant tunneling devices from double-barrier AlGaAs/GaAs heterostructures using electron beam lithography and wet chemical etching. These devices exhibit step-like features in the current-voltage curves. We interpret these steps as arising from additional size quantization of the electronic states in the well due to in-plane lithographic confinement. Magnetotunneling experiments on these devices are reported for the first time. A simple model calculation describes well the experimental data.

Original languageEnglish (US)
Pages (from-to)747-749
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number7
DOIs
StatePublished - Dec 1 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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