Resonant raman scattering by acceptors and LO phonons in GaAs/AlGaAs multiple quantum wells

I. Brener; E. Cohen; Arza Ron; L. Pfeiffer

doi:10.1016/0039-6028(90)90286-H

Resonant raman scattering by acceptors and LO phonons in GaAs/AlGaAs multiple quantum wells

I. Brener, E. Cohen, Arza Ron, L. Pfeiffer

Research output: Contribution to journal › Article › peer-review

Abstract

We report on resonant Raman scattering by neutral acceptors and LO-phonons in two narrow, undoped multi-quantum well structures upon excitation within the inhomogeneously broadened (el :hhl) 1S exciton band. We show that the electronic Raman scattering resonates strongly in the spectral range of localized excitons while that involving LO phonons resonates with delocalized excitons. The electronic Raman scattering depends superlinearly on the exciting laser intensity, showing that ionized acceptors are neutralized by the excitation. Its intensity is approximately one to three orders of magnitude greater than that of the phonon scattering for laser intensities in the range of 3-300 W/cm².

Original language	English (US)
Pages (from-to)	180-183
Number of pages	4
Journal	Surface Science
Volume	228
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(90)90286-H
State	Published - Apr 1 1990
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(90)90286-H

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title = "Resonant raman scattering by acceptors and LO phonons in GaAs/AlGaAs multiple quantum wells",

abstract = "We report on resonant Raman scattering by neutral acceptors and LO-phonons in two narrow, undoped multi-quantum well structures upon excitation within the inhomogeneously broadened (el :hhl) 1S exciton band. We show that the electronic Raman scattering resonates strongly in the spectral range of localized excitons while that involving LO phonons resonates with delocalized excitons. The electronic Raman scattering depends superlinearly on the exciting laser intensity, showing that ionized acceptors are neutralized by the excitation. Its intensity is approximately one to three orders of magnitude greater than that of the phonon scattering for laser intensities in the range of 3-300 W/cm2.",

author = "I. Brener and E. Cohen and Arza Ron and L. Pfeiffer",

year = "1990",

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doi = "10.1016/0039-6028(90)90286-H",

language = "English (US)",

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T1 - Resonant raman scattering by acceptors and LO phonons in GaAs/AlGaAs multiple quantum wells

AU - Brener, I.

AU - Cohen, E.

AU - Ron, Arza

AU - Pfeiffer, L.

PY - 1990/4/1

Y1 - 1990/4/1

N2 - We report on resonant Raman scattering by neutral acceptors and LO-phonons in two narrow, undoped multi-quantum well structures upon excitation within the inhomogeneously broadened (el :hhl) 1S exciton band. We show that the electronic Raman scattering resonates strongly in the spectral range of localized excitons while that involving LO phonons resonates with delocalized excitons. The electronic Raman scattering depends superlinearly on the exciting laser intensity, showing that ionized acceptors are neutralized by the excitation. Its intensity is approximately one to three orders of magnitude greater than that of the phonon scattering for laser intensities in the range of 3-300 W/cm2.

AB - We report on resonant Raman scattering by neutral acceptors and LO-phonons in two narrow, undoped multi-quantum well structures upon excitation within the inhomogeneously broadened (el :hhl) 1S exciton band. We show that the electronic Raman scattering resonates strongly in the spectral range of localized excitons while that involving LO phonons resonates with delocalized excitons. The electronic Raman scattering depends superlinearly on the exciting laser intensity, showing that ionized acceptors are neutralized by the excitation. Its intensity is approximately one to three orders of magnitude greater than that of the phonon scattering for laser intensities in the range of 3-300 W/cm2.

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U2 - 10.1016/0039-6028(90)90286-H

DO - 10.1016/0039-6028(90)90286-H

M3 - Article

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SN - 0039-6028

VL - 228

SP - 180

EP - 183

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Resonant raman scattering by acceptors and LO phonons in GaAs/AlGaAs multiple quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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