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Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure
M. P. Lilly
, J. L. Reno
, J. A. Simmons
, I. B. Spielman
, J. P. Eisenstein
,
L. N. Pfeiffer
, K. W. West
, E. H. Hwang
, S. Das Sarma
Research output
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peer-review
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Keyphrases
Resistivity
100%
Undoped
100%
GaAs Heterostructures
100%
D-electron
100%
Low Temperature
33%
Heterojunction
33%
Low Density
33%
Impurities
33%
High Density
33%
Scattering Mechanism
33%
Phonons
33%
Field-effect Transistors
33%
Acoustic Phonons
33%
2D Electron Systems
33%
Intermediate Range
33%
Ionized Impurity
33%
Resistivity Measurements
33%
High Mobility
33%
Chemistry
Gaas
100%
Heterojunctions
100%
Field Effect
50%
Phonon
50%
Acoustic Phonon
50%
Physics
Heterojunctions
100%
Phonon
100%
Field Effect Transistor
50%
Acoustics
50%