Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure

M. P. Lilly; J. L. Reno; J. A. Simmons; I. B. Spielman; J. P. Eisenstein; L. N. Pfeiffer; K. W. West; E. H. Hwang; S. Das Sarma

doi:10.1103/PhysRevLett.90.056806

Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure

M. P. Lilly, J. L. Reno, J. A. Simmons, I. B. Spielman, J. P. Eisenstein, L. N. Pfeiffer, K. W. West, E. H. Hwang, S. Das Sarma

Research output: Contribution to journal › Article › peer-review

Abstract

We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped [Formula presented] heterojunction in a gated field-effect transistor geometry, a wide range of densities, [Formula presented] to [Formula presented], are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.

Original language	English (US)
Pages (from-to)	4
Number of pages	1
Journal	Physical review letters
Volume	90
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevLett.90.056806
State	Published - 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1103/PhysRevLett.90.056806

Cite this

@article{0f9348d10c0b420a8b0637f8db4d8302,

title = "Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure",

abstract = "We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped [Formula presented] heterojunction in a gated field-effect transistor geometry, a wide range of densities, [Formula presented] to [Formula presented], are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.",

author = "Lilly, \{M. P.\} and Reno, \{J. L.\} and Simmons, \{J. A.\} and Spielman, \{I. B.\} and Eisenstein, \{J. P.\} and Pfeiffer, \{L. N.\} and West, \{K. W.\} and Hwang, \{E. H.\} and \{Das Sarma\}, S.",

year = "2003",

doi = "10.1103/PhysRevLett.90.056806",

language = "English (US)",

volume = "90",

pages = "4",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "5",

}

TY - JOUR

T1 - Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure

AU - Lilly, M. P.

AU - Reno, J. L.

AU - Simmons, J. A.

AU - Spielman, I. B.

AU - Eisenstein, J. P.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Hwang, E. H.

AU - Das Sarma, S.

PY - 2003

Y1 - 2003

N2 - We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped [Formula presented] heterojunction in a gated field-effect transistor geometry, a wide range of densities, [Formula presented] to [Formula presented], are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.

AB - We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped [Formula presented] heterojunction in a gated field-effect transistor geometry, a wide range of densities, [Formula presented] to [Formula presented], are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.

UR - https://www.scopus.com/pages/publications/85038296716

UR - https://www.scopus.com/inward/citedby.url?scp=85038296716&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.90.056806

DO - 10.1103/PhysRevLett.90.056806

M3 - Article

C2 - 12633388

AN - SCOPUS:85038296716

SN - 0031-9007

VL - 90

SP - 4

JO - Physical review letters

JF - Physical review letters

IS - 5

ER -

Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this