Resistivity of dilute 2D electrons in an undoped GaAs heterostructure

M. P. Lilly; J. L. Reno; J. A. Simmons; I. B. Spielman; J. P. Eisenstein; L. N. Pfeiffer; K. W. West; E. H. Hwang; S. Das Sarma

Resistivity of dilute 2D electrons in an undoped GaAs heterostructure

M. P. Lilly, J. L. Reno, J. A. Simmons, I. B. Spielman, J. P. Eisenstein, L. N. Pfeiffer, K. W. West, E. H. Hwang, S. Das Sarma

Research output: Contribution to journal › Article › peer-review

107 Scopus citations

Abstract

Resistivity measurements were made on low disorder gatable 2DEGs over a wide range of densities and temperatures. The resistivity data of high density 2DEGs agree quantitatively with both experimental and theoretical accounts of acoustic phonon scattering in GaAs. Thus, theoretical scattering calculations including both excellent qualitative agreement with the nonmonotonic features in the data. This agreement between experiment and theory in the metallic regime showed that the underlying physics involved was conventional Fermi liquid physics.

Original language	English (US)
Article number	056806
Pages (from-to)	056806/1-056806/4
Journal	Physical review letters
Volume	90
Issue number	5
State	Published - Feb 7 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

@article{c9e85028c71b4de6830b867fb0e60b71,

title = "Resistivity of dilute 2D electrons in an undoped GaAs heterostructure",

abstract = "Resistivity measurements were made on low disorder gatable 2DEGs over a wide range of densities and temperatures. The resistivity data of high density 2DEGs agree quantitatively with both experimental and theoretical accounts of acoustic phonon scattering in GaAs. Thus, theoretical scattering calculations including both excellent qualitative agreement with the nonmonotonic features in the data. This agreement between experiment and theory in the metallic regime showed that the underlying physics involved was conventional Fermi liquid physics.",

author = "Lilly, {M. P.} and Reno, {J. L.} and Simmons, {J. A.} and Spielman, {I. B.} and Eisenstein, {J. P.} and Pfeiffer, {L. N.} and West, {K. W.} and Hwang, {E. H.} and {Das Sarma}, S.",

year = "2003",

month = feb,

day = "7",

language = "English (US)",

volume = "90",

pages = "056806/1--056806/4",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "5",

}

TY - JOUR

T1 - Resistivity of dilute 2D electrons in an undoped GaAs heterostructure

AU - Lilly, M. P.

AU - Reno, J. L.

AU - Simmons, J. A.

AU - Spielman, I. B.

AU - Eisenstein, J. P.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Hwang, E. H.

AU - Das Sarma, S.

PY - 2003/2/7

Y1 - 2003/2/7

N2 - Resistivity measurements were made on low disorder gatable 2DEGs over a wide range of densities and temperatures. The resistivity data of high density 2DEGs agree quantitatively with both experimental and theoretical accounts of acoustic phonon scattering in GaAs. Thus, theoretical scattering calculations including both excellent qualitative agreement with the nonmonotonic features in the data. This agreement between experiment and theory in the metallic regime showed that the underlying physics involved was conventional Fermi liquid physics.

AB - Resistivity measurements were made on low disorder gatable 2DEGs over a wide range of densities and temperatures. The resistivity data of high density 2DEGs agree quantitatively with both experimental and theoretical accounts of acoustic phonon scattering in GaAs. Thus, theoretical scattering calculations including both excellent qualitative agreement with the nonmonotonic features in the data. This agreement between experiment and theory in the metallic regime showed that the underlying physics involved was conventional Fermi liquid physics.

UR - http://www.scopus.com/inward/record.url?scp=0037422982&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037422982&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037422982

SN - 0031-9007

VL - 90

SP - 056806/1-056806/4

JO - Physical review letters

JF - Physical review letters

IS - 5

M1 - 056806

ER -

Resistivity of dilute 2D electrons in an undoped GaAs heterostructure

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this