Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure

M. P. Lilly, J. L. Reno, J. A. Simmons, I. B. Spielman, J. P. Eisenstein, L. N. Pfeiffer, K. W. West, E. H. Hwang, S. Das Sarma

Research output: Contribution to journalArticlepeer-review


We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped [Formula presented] heterojunction in a gated field-effect transistor geometry, a wide range of densities, [Formula presented] to [Formula presented], are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.

Original languageEnglish (US)
Pages (from-to)4
Number of pages1
JournalPhysical review letters
Issue number5
StatePublished - 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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