Abstract
A new resistance resonance effect based on the quantum-mechanical delocalization of electrons in a symmetric-double-well potential is presented. We show that changing the symmetry of the potential profile gives rise to a resistance peak if the transport properties of the two wells are different. The proposed effect is demonstrated experimentally in semiconductor heterostructures.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1929-1932 |
| Number of pages | 4 |
| Journal | Physical review letters |
| Volume | 65 |
| Issue number | 15 |
| DOIs | |
| State | Published - 1990 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy