Abstract
A new resistance resonance effect based on the quantum-mechanical delocalization of electrons in a symmetric-double-well potential is presented. We show that changing the symmetry of the potential profile gives rise to a resistance peak if the transport properties of the two wells are different. The proposed effect is demonstrated experimentally in semiconductor heterostructures.
Original language | English (US) |
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Pages (from-to) | 1929-1932 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 65 |
Issue number | 15 |
DOIs | |
State | Published - 1990 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy