Resistance fluctuations in narrow AlGaAs/GaAs heterostructures: Direct evidence of fractional charge in the fractional quantum hall effect

J. A. Simmons, H. P. Wei, L. W. Engel, D. C. Tsui, Mansour Shayegan

Research output: Contribution to journalArticle

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Abstract

In 2-m-wide Hall bars of high-mobility GaAs/AlGaAs heterostructure resistance fluctuations of quasiperiod "B0.016 T are observed near the diagonal resistance minima for Landau-level filling factors =1,2,3,4. This behavior is consistent with resonant reflection through magnetically bound states as a mechanism for the breakdown of dissipationless transport in narrow channels. In the =(1/3 minimum of the fractional quantum Hall effect we observe similar fluctuation structure, but with a period of 0.05 T3"B, indicative of transport by quasiparticles of fractional charge e/3.

Original languageEnglish (US)
Pages (from-to)1731-1734
Number of pages4
JournalPhysical review letters
Volume63
Issue number16
DOIs
StatePublished - Jan 1 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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